PART |
Description |
Maker |
S29JL032H60TFI310 S29JL032H90TFI310 S29JL032H70TAI |
JT 3C 3#16 SKT PLUG 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 JT 37C 37#22D PIN WALL RECP 2M X 16 FLASH 3V PROM, 70 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 32兆位CMOS 3.0V闪存 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 60 ns, PDSO48 32M BIT CMOS 3.0V FLASH MEMORY 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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Spansion Inc. Advanced Micro Devices, Inc. Spansion, Inc. http://
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JS48F4400P0VB00 PF48F2000P0ZBQ0A JS28F128P30B85B P |
32M X 16 FLASH 1.8V PROM, 95 ns, PDSO56 14 X 20 MM, LEAD FREE, TSOP-56 4M X 16 FLASH 1.8V PROM, 88 ns, PBGA88 8 X 10 MM, 1.20 MM HEIGHT, LEAD FREE, SCSP-88 8M X 16 FLASH 1.8V PROM, 88 ns, PDSO56 16M X 16 FLASH 1.8V PROM, 88 ns, PBGA64
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Numonyx Asia Pacific Pte, Ltd.
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S70WS512N00BAWA30 S70WS512N000BAWA33 |
32M X 16 FLASH 1.8V PROM, 80 ns, PBGA84 Same-Die Stacked Multi-Chip Product (MCP) 512 Megabit (32M x 16 bit) CMOS 1.8 Volt-only Simultaneous Read/Write, Burst-mode Flash Memory
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SPANSION LLC
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NAND256-A NAND01G-A NAND01GW3A2AZB1 NAND01GW3A0AZB |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位1千兆位(x8/x1628 Byte/264字的页面1.8V/3V,NAND闪存芯片 128M X 8 FLASH 1.8V PROM, 35 ns, PBGA63 8M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 64M X 8 FLASH 3V PROM, 35 ns, PBGA55 64M X 16 FLASH 1.8V PROM, 35 ns, PDSO48 128M X 8 FLASH 3V PROM, 35 ns, PDSO48 8M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PDSO48 32M X 16 FLASH 3V PROM, 35 ns, PBGA55
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ST Microelectronics 意法半导 STMicroelectronics N.V. NUMONYX http://
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S29GL032N11TAIV13 2N11FAIV22 S29GL032N70BAI43 S29G |
64 Megabit, 32 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 110 nm MirrorBit Process Technology 2M X 16 FLASH 3V PROM, 110 ns, PDSO56 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 2M X 16 FLASH 3V PROM, 70 ns, PBGA64 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 70 ns, PBGA48 4M X 16 FLASH 3V PROM, 90 ns, PBGA48
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Spansion, Inc. SPANSION LLC
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HY27SS08561M-FPCP HY27SS08561M-FCP |
32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, LEAD FREE, FBGA-63 32M X 8 FLASH 1.8V PROM, 10000 ns, PBGA63 9 X 11 MM, 1.20 MM HEIGHT, 0.80 MM PITCH, FBGA-63
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Hynix Semiconductor, Inc.
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AT49SN6416T AT49SN3208T AT49SN6416T-90CJ |
AT49SN6416(T)/3208(T) Advance Information [Updated 3/02. 38 Pages] 64M bit and 32M. 1.8-Volt Burst and Page Mode Flash Memory 4M X 16 FLASH 1.8V PROM, 90 ns, CBGA55
|
ATMEL CORP
|
MBM29F033C-90 MBM29F033C-90PTN MBM29F033C-70PTR MB |
32M (4M X 8) BIT 4M X 8 FLASH 5V PROM, 120 ns, PDSO40
|
Fujitsu, Ltd. Fujitsu Limited Fujitsu Component Limited.
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
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Spansion, Inc. SPANSION LLC
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AS8FLC1M32BQT-90_IT AS8FLC1M32BQT-90_Q AS8FLC1M32B |
Hermetic, Multi-Chip Module (MCM) 32Mb, 1M x 32, 3.0Volt Boot Block FLASH Array 1M X 32 FLASH 3V PROM, 70 ns, CPGA66 HIP-66 1M X 32 FLASH 3V PROM, 100 ns, CQFP68
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http:// Austin Semiconductor, Inc MICROSS COMPONENTS
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